2N6125 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
2N6125 Datasheet PDF : 3 Pages
| |||
Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6124 2N6125 2N6126
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6124
2N6125 IC=-0.1A ;IB=0
2N6126
VCEsat-1 Collector-emitter saturation voltage IC=-1.5A;IB=-0.15A
VCEsat-2 Collector-emitter saturation voltage IC=-4.0A;IB=-1.0A
VBE(on)
ICEX
ICEO
Base-emitter on voltage
Collector cut-off current
IC=-1.5A ; VCE=-2V
2N6124
2N6125
2N6126
VCE=-45V;VBE=1.5V
TC=125℃
VCE=-60V;VBE=1.5V
TC=125℃
VCE=-80V;VBE=1.5V
TC=125℃
2N6124 VCE=-45V;IB=0
Collector cut-off current 2N6125 VCE=-60V;IB=0
2N6126 VCE=-80V;IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
2N6124
hFE-1
DC current gain
2N6125 IC=-1.5A ; VCE=-2V
2N6126
2N6124
hFE-2
DC current gain
2N6125 IC=-4A ; VCE=-2V
2N6126
fT
Transition frequency
IC=-1A ; VCE=-4V
MIN TYP. MAX UNIT
-45
-60
V
-80
-0.6
V
-1.4
V
-1.2
V
-0.1
-2.0
-0.1
-2.0
mA
-0.1
-2.0
-1.0 mA
-1.0 mA
25
100
20
80
10
7
2.5
MHz
2
Share Link: 