2SD882O Ver la hoja de datos (PDF) - Weitron Technology

Número de pieza

componentes Descripción

Fabricante

2SD882O

PNP / NPN Epitaxial Planar Transistors

Weitron Technology 

2SB772

2SD882

ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

Characteristics

Symbol

Min

TYP

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC= -1.0/1.0 Adc, VCE=-2.0/2.0Vdc)

DC Current Gain

(IC= -100/100 mAdc, VCE= -2.0/2.0 Vdc)

Collector-Emitter Saturation Voltage

(IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc)

Base-Emitter Saturation Voltage

(IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc)

Current-Gain-Bandwidth Product

(IC= -0.1/0.1 mAdc, VCE=-5.0/5.0 Vdc, f=10MHz)

hFE (1)

60

-

400

-

hFE (2)

32

VCE(sat)

-

-

-

-

-

-0.5/0.5

Vdc

VBE(sat)

-

-

-2.0/2.0

Vdc

fT

-

80/90

-

MHz

Classification of hFE(1)

Rank

Range

R

60-120

O

100-200

Y

160-320

GR

200-400

WEITRON

http://www.weitron.com.tw

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