D882 Ver la hoja de datos (PDF) - Weitron Technology
Número de pieza
componentes Descripción
Fabricante
D882 Datasheet PDF : 5 Pages
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2SB772
2SD882
F1. Total Power Dissipation VS.
Ambient Temperature
10
8
NOTE
1. Aluminum heat sink
of 1.0 mm thickness.
2. With no insulator film.
3. With silicon compound.
6
4
25
100
cm 2
infinite
cm 2
heat
sink
2 9 cm 2
Without heat sink
0
50
100
150
Ta-Amient Temperature-°C
F3. Thermal Resistance VS.
Pulse Width
VCE=10V
°
IC =1.0A
30 Duty=0.001
10
3
1
0.3
0.1
0.3
1
3
10 30 100 300 1000
PW-Pulse Width-ms
2SB772
F5. Collector Current VS. Collector
To Emitter Voltage
-2.0
Pulse Test
IB=-10mA
-1.6
IB=-9mA
IB=-8MA
IB=-7mA
-1.2
IB=-6mA
IB=-5mA
-0.8
IB=-4mA
IB=-3mA
-0.4
IB=-2mA
0
0
-4
IB=-1mA
-8
-12
-16
-20
vCE -Collector-Emitter Voltage(V)
F.2 Derating Curve for All Types
100
80
60
S/b limited
40
20
0
0
50
100
150
Tc,Case Temperature(°C)
F4. Safe Operating Areas
10
3
( ) Ic(max),Pulse DPuWty< -Cy1c0lem< -s50
Ic(max),DC 10mS
1mS
%
0.1mSPW=100
us
1
0.3
(SinglDeLisnimsoiniptreaedtpioentitivse/bpLuilmseit)ed
0.1
NOTE
1. Tc=25 C
0.03 2. Curves must be derated
linearly with increase of
temperature and Duty Cycle.
0.01
1
3
6 10
30
60
100
VCE-Collector to Emitter Voltage-V
2SD882
F6. Collector Current VS. Collector
To Emitter Voltage
2.0
Pulse Test
IB=10mA
1.6
IB=9mA
IB=8MA
IB=7mA
1.2
IB=6mA
IB=5mA
0.8
IB=4mA
IB=3mA
0.4
IB=2mA
0
0
4
IB=1mA
8
12
16
20
vCE -Collector-Emitter Voltage(V)
WEITRON
http://www.weitron.com.tw
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