SMD Type
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Fall time
* Pulsed: PW 350 ìs, duty cycle 2%
Symbol
Testconditons
ICBO VCB = 60 V, IE = 0
IEBO VEB = 5 V, IC = 0
VCE = 5 V, IC = 50 mA
hFE VCE = 5 V, IC = 500 mA
VCE = 5 V, IC = 3A
VCE(sat) IC = 2.0 A, IB = 20 mA
VBE(sat) IC = 2.0 A, IB = 20 mA
fT VCE = 5 V, IE = -100 mA
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
ton IC = 2 A,VCC = 10 V
tstg IB1=-IB2=20 mA
tf RL=5Ù
hFE Classification
Marking
hFE
M
800 1600
L
1000 2000
K
1600 3200
Transistors
Product specification
2SD1584-Z
Min Typ Max Unit
10 ìA
10 ìA
600 1650
800 1800 3200
500 1400
0.25 0.5 V
0.8 1.2 V
50 120
MHz
20
pF
0.9
ìs
2.6
ìs
1
ìs
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sales@twtysemi.com
4008-318-123
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