BAS21DW5T1 Ver la hoja de datos (PDF) - TY Semiconductor

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componentes Descripción

Fabricante

BAS21DW5T1

High Voltage Switching Diode

TY Semiconductor 

Features

Fast Switching Speed

Surface Mount Package Ideally Suited for Automatic Insertion

High Conductance

For General Purpose Switching Applications

Product specification

BAS21DW5T1

SOT-353

1.3+0.1

-0.1

0.65

Unit: mm

0.3+0.1

-0.1

2.1+0.1

-0.1

0.1+0.05

-0.02

Absolute Maximum Ratings Ta = 25

Parameter

Reverse Voltage

Peak Reverse Voltage

Forward Current

Power Dissipation

Operating Junction Temperature Range

Storage Temperature Range

Symbol

Rating

Unit

VR

250

V

VRRM

250

V

IF

200

mA

PD

385

mW

TJ

-55 to +150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Reverse Breakdown Voltage

Forward Voltage

Reverse Leakage

Junction Capacitance

Reverse Recover Time

Symbol

Testconditons

V(BR) IR=100 A

IF=100mA

VF

IF=200mA

VR=200V

IR

VR=200V,TJ = 150

Cj VR=0V, f=1.0MHz

Trr IF = IR = 30 mA, IR(REC) = 3.0 mAdc, RL = 100

Min Typ Max Unit

250

V

1.0

V

1.25

0.1

A

100

A

5.0 pF

50 nS

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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