BAT85 Ver la hoja de datos (PDF) - NXP Semiconductors.
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BAT85 Datasheet PDF : 9 Pages
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NXP Semiconductors
BAT85
Schottky barrier single diode
7. Characteristics
Table 7.
Symbol
VF
IR
Cd
trr
Characteristics
Parameter
Conditions
forward voltage
IF = 0.1 mA; Tamb = 25 °C
IF = 1 mA; Tamb = 25 °C
IF = 10 mA; Tamb = 25 °C
IF = 30 mA; Tamb = 25 °C
IF = 100 mA; Tamb = 25 °C
reverse current
VR = 25 V; Tamb = 25 °C
diode capacitance
f = 1 MHz; Tamb = 25 °C; VR = 1 V
reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω;
IR(meas) = 1 mA; Tamb = 25 °C
Min Typ Max Unit
-
-
240 mV
-
-
320 mV
-
-
400 mV
-
-
500 mV
-
-
800 mV
-
-
2
µA
-
-
10
pF
-
-
4
ns
103
IF
(mA)
102
10
(1) (2) (3)
mld358
105
IR
(nA)
(1)
104
103
(2)
102
mgc682
(1) (2) (3)
1
10- 1
0
0.4
0.8
1.2
VF (V)
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
Fig. 1. Forward current as a function of forward
voltage; typical values
10
1
(3)
10- 1
0
10
20
30
VR (V)
(1) Tamb = 85 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig. 2. Reverse current as a function of reverse
voltage; typical values
BAT85
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 July 2012
© NXP B.V. 2012. All rights reserved
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