BC807 Ver la hoja de datos (PDF) - Diotec Semiconductor Germany
Número de pieza
componentes Descripción
Fabricante
BC807 Datasheet PDF : 2 Pages
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BC807 / BC808
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
- VCE = 1 V, - IC = 500 mA
- VBE
–
–
1.2 V
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 20 V, (E open)
- VCB = 20 V, Tj = 125°C, (E open)
Emitter-Base cutoff current – Emitter-Basis-Reststrom
- ICB0
–
–
100 nA
- ICB0
–
–
5 µA
- VEB = 4 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
- IEB0
–
–
100 nA
- VCE = 5 V, - IC = 10 mA, f = 50 MHz
fT
–
100 MHz
–
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE =ie = 0, f = 1 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
CCBO
–
12 pF
–
RthA
< 420 K/W 1)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BC817 / BC818
Marking of available current gain groups per type
BC807-16 = 5A or 5CR BC808-16 = 5E or 5CR
Stempelung der lieferbaren Stromverstärkungsgruppen pro BC807-25 = 5B or 5CS BC808-25 = 5F or 5CS
Typ
BC807-40 = 5C or 5CT BC808-40 = 5G or 5CT
120
[%]
100
80
60
40
20
Ptot
0
0 TA 50
100
150 [°C]
Power dissipation versus ambient temperature 1)
Verlustleistung in Abh. von d. Umgebungstemp.1)
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
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