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BC856

PNP SILICON TRANSISTOR

Unisonic Technologies 

BC856/BC857/BC858

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

BC856

-80

V

Collector-Base Voltage

BC857

VCBO

-50

V

BC858

-30

V

BC856

-65

V

Collector-Emitter Voltage

BC857

VCEO

-45

V

BC858

-30

V

Emitter-Base Voltage

VEBO

-5

V

Collector Dissipation

PD

310

mW

Collector Current (DC)

Junction Temperature

Storage Temperature

IC

-100

mA

TJ

+150

°C

TSTG

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

Collector Cut-Off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

Noise Figure

SYMBOL

TEST CONDITIONS

ICBO VCB=-30V, IE=0

hFE VCE=-5V, IC=-2mA

VCE(SAT) IC=-10mA,IB=-0.5mA

IC=-100mA,IB=-5mA

VBE(SAT) IC=-10mA,IB=-0.5mA

IC=-100mA,IB=-5mA

VBE(ON)

VCE=-5V,IC=-2mA

VCE=-5V,IC=-10mA

fT VCE=-5V,IC=-10mA, f=100MHz

Cob VCB=-10V,IE=0,f=1MHz

NF VCE=-5V, IC=-200μA, f=1KHz, RG=2KΩ

„ CLASSIFICATION OF hFE

RANK

RANGE

A

110-220

B

200-450

MIN

110

-600

TYP

-90

-250

-700

-900

-660

150

2

MAX UNIT

-15 nA

800

-300 mV

-650 mV

mV

mV

-750 mV

-800 mV

MHz

6 pF

10 dB

C

420-800

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R206-028,E

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