NXP Semiconductors
N-channel dual gate MOS-FETs
Product specification
BF904; BF904R
handbook,2h0alfpage
ID
(mA)
16
12
8
4
0
0
2
VG1 S = 1.4 V
1.3 V
1.2 V
1.1 V
1.0 V
0.9 V
MLD269
4
6
8
10
VDS (V)
VG2-S = 4 V.
Tj = 25 °C.
Fig.8 Output characteristics; typical values.
handboo1k,5h0alfpage
I G1
(µA)
100
50
MLD271
VG2 S = 4 V
3.5 V
3V
2.5 V
2V
0
0
0.5
1.0
1.5
2.0
2.5
VG1 S (V)
VDS = 5 V.
Tj = 25 °C.
Fig.9 Gate 1 current as a function of gate 1
voltage; typical values.
handbook,4h0alfpage
y fs
(mS)
30
20
MLD272
VG2 S = 4 V
3.5 V
3V
2.5 V
10
0
0
4
2V
8
12
16
20
I D (mA)
VDS = 5 V.
Tj = 25 °C.
Fig.10 Forward transfer admittance as a
function of drain current; typical values.
handbook,1h6alfpage
ID
(mA)
12
MLD273
8
4
0
0
10
20
30
40
50
I G1 (µA)
VDS = 5 V.
VG2-S = 4 V.
Tj = 25 °C.
Fig.11 Drain current as a function of gate 1 current;
typical values.
Rev. 06 - 13 November 2007
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