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BU807FI

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

BU807FI

DESCRIPTION

·High Voltage: VCBO= 330V(Min)

·Low Saturation Voltage-

: VCE(sat)= 1.5V(Max)@ IC= 5A

APPLICATIONS

·Designed for use in horizontal deflection circuits in TV’s

and CRT’s.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

330

V

VCEV

Collector-Emitter Voltage

330

V

VCEO

Collector-Emitter Voltage

150

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

8

A

ICM

Collector Current-Peak

15

A

IBB

Base Current

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

2

A

30

W

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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