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BU807FI

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

BU807FI

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 50mA

VBE(sat) Base-Emitter Saturation Voltage

IC= 5A; IB=B 50mA

ICES

Collector Cutoff Current

VCE= 330V; VBE= 0

ICEV

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCE= 330V; VBE(off)= 6V

VEB= 6V; IC= 0

VECF

C-E Diode Forward Voltage

IF= 4A

MIN TYP. MAX UNIT

150

V

1.5

V

2.4

V

0.1 mA

0.1 mA

3.0 mA

2.0

V

isc Website：www.iscsemi.cn

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