BUL770 Ver la hoja de datos (PDF) - Bourns, Inc

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BUL770

NPN SILICON POWER TRANSISTOR

Bourns, Inc 

BUL770

NPN SILICON POWER TRANSISTOR

TYPICAL CHARACTERISTICS

FORWARD CURRENT TRANSFER RATIO

vs

COLLECTOR CURRENT

L770CHF

30

TC = 25°C

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

L770CVB

10

IB = IC / 5

TC = 25°C

TC = 90°C

10

1·0

0·1

VCE = 1 V

VCE = 5 V

1·0

0·01

0·01

0·1

1·0

10

0·1

1·0

10

IC - Collector Current - A

IC - Collector Current - A

Figure 1.

Figure 2.

INDUCTIVE SWITCHING TIMES

vs

COLLECTOR CURRENT

10

L770CI1

IB(on) = IC / 5

tsv

IB(off) = IC / 2.5

txo

VCC = 40 V

tfi

VCLAMP = 300 V

L

1·0 TC

= 1 mH

= 25°C

0·1

0·01

0·1

1·0

10

IC - Collector Current - A

Figure 3.

PRODUCT INFORMATION

JULY 1991 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

INDUCTIVE SWITCHING TIMES

vs

CASE TEMPERATURE

10

L770CI3

IB(on) = 160 mA, VCC = 40 V, L = 1 mH

IB(off) = 320 mA, VCLAMP = 300 V, IC = 800 mA

1·0

tsv

tfi

0·1

0

20

40

60

80

100

TC - Case Temperature - °C

Figure 4.

3

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