BUY69A Ver la hoja de datos (PDF) - STMicroelectronics
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BUY69A Datasheet PDF : 4 Pages
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BUY69A
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Max
1.75
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICES
IEBO
VCEO(sus)
Collector Cut-off
Current (VBE = 0)
Emitter Cut-off Current
(IC = 0)
Co lle ct or- Em it t er
Sustaining Voltage
VCE = 1000 V
VEB = 8 V
IC = 100 mA
VCE(sat)∗ Collect or-Emitter
Saturation Voltage
IC = 8 A
IB = 2.5 A
VBE(s at)∗ Base-Emitt er
Saturation Voltage
IC = 8 A
IB = 2.5 A
hFE∗ DC Current G ain
IC = 2.5 A
VCE = 10 V
fT
Transit ion F requency IC = 0. 5 A
VCE = 10 V
Is/b**
Second Breakdown
Collector Current
VCE = 25 V
Turn on Time
ton
IC = 5 A
IB1 = 1 A
VCE = 250 V
ts
Storage Time
ts
Fall Time
IC = 5 A
IB1 = - IB2 = 1 A
VCE = 250 V
tf
Fall Time
IC = 8 A
IB1 = - IB2 = 2.5 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
∗∗ Pulsed: 1s, non repetitive pulse.
For characteristics curves see the BUW34/5/6 series.
VCE = 40 V
Min. Typ.
1000
15
10
4
0.2
M a x.
1
1
3.3
2.2
1.7
0.3
1
Unit
mA
mA
V
V
V
MHz
A
µs
µs
µs
µs
2/4
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