FDFS6N303 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDFS6N303 Datasheet PDF : 5 Pages
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Typical Fet And Schottky Electrical Characteristics
10
ID = 6.0A
8
6
V DS = 5V
10V
15V
4
2
0
0
2
4
6
8
10
12
14
Q g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1000
500
Ciss
Coss
200
100
f = 1 MHz
Crss
VGS = 0V
50
0.1
0.3
1
3
10
30
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
10
TJ= 125°C
1
25°C
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
VF , FORWARD VOLTAGE (V)
Figure 9. Schottky Diode Forward Voltage.
1
0.1
0.01
0.001
0.0001
0.00001
0
TJ = 125°C
25°C
5
10
15
20
25
30
VR , REVERSE VOLTAGE (V)
Figure 10. Schottky Diode Reverse Current.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.001
0.0001
0.001
0.01
0.1
1
t1 , TIME (sec)
R θJA (t) = r(t) * R θJA
R θJA =135° C/W
P(pk)
t1
t2
TJ - TA = P * RθJA (t)
Duty Cycle, D = t1 /t2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1c.
Transient thermal response will change depending on the circuit board design.
FDFS6N303 Rev. D3
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