FCX1151A Ver la hoja de datos (PDF) - TY Semiconductor

Número de pieza

componentes Descripción

Fabricante

FCX1151A

PNP Silicon Power Switching Transistor

TY Semiconductor 

SSMMDD TTyyppee

Electrical Characteristics Ta = 25

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage *

Emitter-base breakdown voltage

Collector cut-off current

Collector Emitter Cut-Off Current

Emitter Cut-Off Current

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Base-emitter ON voltage *

Static Forward Current Transfer Ratio *

Transitional frequency

Output capacitance

Turn-on time

Turn-off time

* Pulse test: tp = 300 ìs; d

0.02.

Symbol

Testconditons

V(BR)CBO IC=-100ìA

V(BR)CEO IC=-10mA

V(BR)EBO IE=-100ìA

ICBO VCB=-36V

ICES VCE=-32V

IEBO VEB=-4V

IC=-0.1A, IB=-1mA

VCE(sat) IC=-0.5A, IB=-5mA

IC=-1A, IB=-20mA

IC=-3A, IB=-250mA

VBE(sat) IC=-3A, IB=-250mA

VBE(on) IC=-3A, VCE=-2V

hFE

fT

Cobo

t(on)

t(off)

IC=-10mA,VCE=-2V

IC=-0.5A,VCE=-2V

IC=-2A,VCE=-2V

IC=-3A,VCE=-2V

IC=-5A,VCE=-2V

IC=-50mA, VCE=-10V, f=50MHz

VCB=-10V, f=1MHz

IC=-2A, VCC=-30V

IB1=IB2=-20mA

Marking

Marking

151

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Product specification

FCX1151A

Min Typ Max Unit

-45

V

-40

V

-5

V

-0.3 -100 nA

-0.3 -100 nA

-0.3 -100 nA

-60 -90

-120 -180

-140 -220

mV

-200 -300

-985 -1050 mV

-850 -950 mV

270 450

250 400 800

180 300

100 190

45

145

MHz

40

pF

170

ns

460

ns

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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