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FS10ASJ-03 Datasheet PDF : 4 Pages
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MITSUBISHI Nch POWER MOSFET
FS10ASJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 4V
ID = 5A, VGS = 10V
ID = 5A, VDS = 5V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 15V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
IS = 5A, dis/dt = –50A/µs
Limits
Unit
Min.
Typ. Max.
30
—
—
V
—
—
±0.1
µA
—
—
0.1
mA
1.0
1.5
2.0
V
—
58
75
mΩ
—
90
150 mΩ
—
0.29 0.375 V
—
7.5
—
S
—
360
—
pF
—
160
—
pF
—
55
—
pF
—
11
—
ns
—
25
—
ns
—
35
—
ns
—
23
—
ns
—
1.0
1.5
V
—
—
6.25 °C/W
—
35
—
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
40
32
24
16
8
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
5
3
2
tw = 10ms
101
7
5
100ms
3
2
1ms
100
10ms
7
DC
5
TC = 25°C
3
Single Pulse
2
10–1
7
5
23
5 7 100
23
5 7 101 2 3
5 7 102 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
20 Tc = 25°C
Pulse Test
16
VGS = 10V
8V 6V
5V
4V
12
PD = 20W
8
3V
4
OUTPUT CHARACTERISTICS
(TYPICAL)
10
Tc = 25°C
Pulse Test
6V
8V 5V
4V
8
VGS = 10V
6
3V
4
2.5V
2
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
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