HJ44H11G(2012) Ver la hoja de datos (PDF) - Unisonic Technologies

Número de pieza

componentes Descripción

Fabricante

HJ44H11G
(Rev.:2012)

NPN EPITAXIAL PLANAR TRANSISTOR

Unisonic Technologies 

HJ44H11

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (TA=25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector- Emitter Voltage

VCEO

80

V

Collector-Emitter Voltage

VCES

80

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

8

A

Base Current

IB

5

A

SOT-223

5

Power Dissipation (TC=25℃)

TO-220

PD

65

W

TO-252

20

Junction Temperature

Storage Temperature

TJ

TSTG

+150

℃

-55~+150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (TA=25℃)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Collector-Emitter Breakdown Voltage

BVCEO IC=30mA, IB=0

80

Collector-Emitter Breakdown Voltage

BVCES IC=1mA, IB=0

80

Emitter-Base Breakdown Voltage

BVEBO IE=1mA, IC=0

5

Collector Cut-Off Current

ICES VCB=80V, VEB=0

Emitter Cut-off Current

IEBO VEB=5V, IC=0

Collector-Emitter Saturation Voltage(Note) VCE(SAT) IC=8A, IB=0.4A

Base-Emitter Saturation Voltage(Note)

VBE(SAT) IC=8A, IB=0.8A

DC Current Gain (Note)

hFE1 VCE=1V, IC=2A

60

hFE2 VCE=1V, IC=4A

40

Output Capacitance

COB VCB=10V

Transition Frequency

fT VCE=10V, IC=500mA, f=20MHz

Note: Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

TYP

130

50

MAX

10

50

1

1.5

UNIT

V

V

V

uA

uA

V

V

pF

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R209-024.D

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