HY27UF164G2B Ver la hoja de datos (PDF) - Hynix Semiconductor

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HY27UF164G2B

4Gbit (512Mx8bit) NAND Flash Memory

Hynix Semiconductor 

1

HY27UF(08/16)4G2B Series

4Gbit (512Mx8bit) NAND Flash

Item

Symbol

Test Condition

Min

Input / Output Capacitance

CI/O

VIL=0V

-

Input Capacitance

CIN

VIN=0V

-

Table 11: Pin Capacitance (TA=25C, F=1.0MHz)

Max

10

10

Unit

pF

pF

Parameter

Symbol

Program Time / Multi-Plane Program Time

tPROG

Dummy Busy Time for Two Plane Program

tDBSY

Number of partial Program Cycles in the same page

NOP

Block Erase Time / Multi-Plane Block Erase Time

tBERS

Read Cache Busy Time

tRBSY

Table 12: Program / Erase Characteristics

Min Typ Max Unit

- 200 700 us

-

0.5

1

us

-

-

8 Cycles

-

1.5

2

ms

-

3

tR

us

Rev 0.4 / Jan. 2008

20

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