HY29F400TG70 Ver la hoja de datos (PDF) - Hynix Semiconductor
Número de pieza
componentes Descripción
Fabricante
HY29F400TG70 Datasheet PDF : 40 Pages
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DC CHARACTERISTICS
TTL/NMOS Compatible
Parameter
Description
Test Setup
Min
ILI
Input Load Current
ILIT
Input Load Current
A[9], OE#, RESET#
VIN = VSS to VCC,
VCC = VCC Max
VCC = VCC Max; A[9] =
OE# = RESET# = 12.5 V
ILO
Output Leakage Current
VOUT = VSS to VCC,
VCC = VCC Max
CE# = VIL, OE# = VIH,
f = 5MHz, Byte Mode
ICC1
VCC Active Read Current 1, 2 CE# = VIL, OE# = VIH,
f = 5MHz, Word Mode
ICC2
VCC Active Write Current 2, 3, 4 CE# = VIL, OE# = VIH
ICC3
VCC CE# Controlled
TTL Standby Current 2
OE# = CE# = RESET#
= VIH
ICC4
VCC RESET# Controlled
TTL Standby Current 2
RESET# = VIL
VIL
Input Low Voltage
-0.5
VIH Input High Voltage
2.0
VID
Voltage for Electronic ID and
Temporary Sector Unprotect
VCC = 5.0V
11.5
VOL Output Low Voltage
VCC = VCC Min,
IOL = 5.8 mA
VOH Output High Voltage
VCC = VCC Min,
IOH = -2.5 mA
2.4
VLKO Low VCC Lockout Voltage4
3.2
Notes:
1. The ICC current is listed is typically less than 2 mA/MHz with OE# at VIH.
2. Maximum I specifications are tested with V = V Max.
CC
CC
CC
3. ICC active while the Automatic Erase or Automatic Program algorithm is in progress.
4. Not 100% tested.
HY29F400
Typ
Max Unit
±1.0
µA
50
µA
±1.0
µA
19
40
mA
19
50
mA
36
60
mA
0.4
1.0
mA
0.4
1.0
mA
0.8
V
VCC + 0.5 V
12.5
V
0.45
V
V
4.2
V
Rev. 5.2/May 01
21
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