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L2N7002DW1T3G

(L2N7002DW1T1G / L2N7002DW1T3G) Small Signal MOSFET 115mAps, 60Volts N–Channel SC-88

Leshan Radio Company,Ltd 

LESHAN RADIO COMPANY, LTD.

L2N7002DW1T1G , S-L2N7002DW1T1G

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0, ID = 10 µAdc)

Zero Gate Voltage Drain Current

(VGS = 0, VDS = 60 Vdc)

Gate–Body Leakage Current, Forward

(VGS = 20 Vdc)

Gate–Body Leakage Current, Reverse

(VGS = – 20 Vdc)

TJ = 25°C

TJ = 125°C

V(BR)DSS

60

IDSS

–

–

IGSSF

–

IGSSR

–

ON CHARACTERISTICS (Note 2.)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

On–State Drain Current

(VDS ≥ 2.0 VDS(on), VGS = 10 Vdc)

Static Drain–Source On–State Voltage

(VGS = 10 Vdc, ID = 500 mAdc)

(VGS = 5.0 Vdc, ID = 50 mAdc)

Static Drain–Source On–State Resistance

(VGS = 10 V, ID = 500 mAdc)

(VGS = 5.0 Vdc, ID = 50 mAdc)

TC = 25°C

TC = 125°C

TC = 25°C

TC = 125°C

Forward Transconductance

(VDS ≥ 2.0 VDS(on), ID = 200 mAdc)

DYNAMIC CHARACTERISTICS

VGS(th)

1.0

ID(on)

500

VDS(on)

–

–

rDS(on)

–

–

–

–

gFS

80

Input Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Output Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Ciss

–

Coss

–

Crss

–

SWITCHING CHARACTERISTICS (Note 2.)

Turn–On Delay Time

Turn–Off Delay Time

(V DD = 25 Vdc , ID ^ 500 mAdc,

RG = 25 Ω, RL = 50 Ω, Vgen = 10 V)

BODY–DRAIN DIODE RATINGS

td(on)

–

td(off)

–

Diode Forward On–Voltage

(IS = 115 mAdc, V GS = 0 V)

Source Current Continuous

(Body Diode)

VSD

–

IS

–

Source Current Pulsed

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

ISM

–

Typ

Max Unit

–

–

Vdc

–

1.0

µAdc

–

500

–

1

µAdc

–

-1

µAdc

–

2.0

Vdc

–

–

mA

Vdc

–

3.75

–

0.375

Ohms

–

7.5

–

13.5

–

7.5

–

13.5

–

– mmhos

–

50

pF

–

25

pF

–

5.0

pF

–

20

ns

–

40

ns

–

–1.5

Vdc

–

–115 mAdc

–

–800 mAdc

Rev .O 2/4

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