MJE703 Ver la hoja de datos (PDF) - Inchange Semiconductor

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componentes Descripción

Fabricante

MJE703

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

MJE703

DESCRIPTION

·Collector–Emitter Sustaining Voltage—

: VCEO(SUS) = -80 V

·DC Current Gain—

: hFE = 750(Min) @ IC= -2 A

= 100(Min) @ IC= -4A

·Complement to Type MJE803

APPLICATIONS

·Designed for general-purpose amplifier and low-speed

switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-80

V

VCEO

Collector-Emitter Voltage

-80

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-4

A

IBB

Base Current

Collector Power Dissipation

PC

TC=25℃

Ti

Junction Temperature

Tstg

Storage Temperature Range

-1

A

40

W

150

℃

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Thermal Resistance, Junction to Case 3.13 ℃/W

isc Website：www.iscsemi.cn

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