NXP Semiconductors
PBSS3515E
15 V, 0.5 A PNP low VCEsat (BISS) transistor
12. Revision history
Table 9. Revision history
Document ID
Release date Data sheet status
Change notice Supersedes
PBSS3515E_2
Modifications:
20090427
Product data sheet
-
PBSS3515E_1
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Figure 2: added
• Table 6 “Thermal characteristics”: enhanced
• Table 7 “Characteristics”: switching times added
• Figure 5, 8 and 9: amended
• Section 13 “Legal information”: updated
PBSS3515E_1
20050418
Product data sheet
-
-
PBSS3515E_2
Product data sheet
Rev. 02 — 27 April 2009
© NXP B.V. 2009. All rights reserved.
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