QM1000HA-24B Ver la hoja de datos (PDF) - Mitsumi
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QM1000HA-24B Datasheet PDF : 5 Pages
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MITSUBISHI TRANSISTOR MODULES
QM1000HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Conditions
IC=1A, VEB=2V
VEB=2V
Emitter open
Collector open
DC
DC (forward diode current)
TC=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M8
—
Mounting torque
Mounting screw M6
B(E) terminal screw M4
—
Weight
BX terminal screw M4
Typical value
Ratings
1200
1200
1200
7
1000
1000
7000
50
10000
–40~+150
–40~+125
2500
8.83~10.8
90~110
1.96~2.94
20~30
0.98~1.47
10~15
0.98~1.47
10~15
2100
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
Parameter
Test conditions
ICEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Collector cutoff current
VCE=1200V, VEB=2V
Collector cutoff current
VCB=1200V, Emitter open
Emitter cutoff current
VEB=7V, Collector open
Collector-emitter saturation voltage
IC=1000A, IB=1.33A
Base-emitter saturation voltage
Collector-emitter reverse voltage IC=–1000A (diode forward voltage)
DC current gain
IC=1000A, VCE=4.0V
Switching time
VCC=600V, IC=1000A, IB1=2A, –IB2=20A
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Transistor part
Diode part
Conductive grease applied
Min.
—
—
—
—
—
—
750
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
Max.
8.0
8.0
400
4.0
4.2
1.8
—
2.5
20
7.0
0.018
0.07
—
—
0.01
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/ W
°C/ W
°C/ W
Feb.1999
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