K06N60 Ver la hoja de datos (PDF) - Infineon Technologies

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componentes Descripción

Fabricante

K06N60

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

0.8mJ

*) Eon and Ets include losses

due to diode recovery.

Ets*

0.6mJ

0.4mJ

0.2mJ

Eon*

E off

SKP06N60

SKA06N60

0.6mJ

*) Eon and Ets include losses

due to diode recovery.

Ets*

0.4mJ

0.2mJ

E o ff

Eon*

0.0mJ

0A

3A

6A

9A 12A 15A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, Tj = 150°C, VCE = 400V,

VGE = 0/+15V, RG = 50Ω,

Dynamic test circuit in Figure E)

0.4mJ

*) Eon and Ets include losses

due to diode recovery.

Ets*

0.3mJ

0.0mJ

0Ω

50Ω

100Ω

150Ω

RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, Tj = 150°C, VCE = 400V,

VGE = 0/+15V, IC = 6A,

Dynamic test circuit in Figure E)

0.2mJ

0.1mJ

Eon*

Eoff

0.0mJ

0°C

50°C

100°C

150°C

Tj, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction temperature

(inductive load, VCE = 400V, VGE = 0/+15V,

IC = 6A, RG = 50Ω,

Dynamic test circuit in Figure E)

7

Rev. 2.3 Sep 07

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