SS8550 Ver la hoja de datos (PDF) - Weitron Technology

Número de pieza

componentes Descripción

Fabricante

SS8550

PNP Silicon Plastic-Encapsulate Transistors

Weitron Technology 

SS8550

ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

Characteristics

Symbol

Min

TYP

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC= -100 mAdc, VCE=-1.0 Vdc)

DC Current Gain

(IC= -800 mAdc, VCE= -1.0 Vdc)

Collector-Emitter Saturation Voltage

(IC= -800 mAdc, IB= -80 mAdc)

Base-Emitter Saturation Voltage

(IC= -800 mAdc, IB= -80 mAdc)

Transition Frequency

(VCE =-10V, IC =-50mA, f=30 MHz)

Classification of hFE(1)

Rank

Range

B

85-160

hFE(1)

85

-

hFE(2)

40

-

VCE(sat)

-

-

VBE(sat)

-

-

fT

100

-

400

-

-

-

-0.5

Vdc

-1.2

Vdc

-

MHz

C

120-200

D

160-300

E

300-400

WEITRON

http://www.weitron.com.tw

Share Link: