UPA800T Ver la hoja de datos (PDF) - Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
UPA800T
Renesas Electronics
UPA800T Datasheet PDF : 8 Pages
| |||
µPA800T
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-back Capacitance
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
SYMBOL
CONDITION
ICBO
VCB = 10 V, IE = 0
IEBO
VEB = 1 V, IC = 0
hFE
VCE = 3 V, IC = 5 mANote 1
fT
Cre
|S21e|2
|S21e|2
VCE = 3 V, IC = 5 mA
VCB = 3 V, IE = 0, f = 1 MHzNote 2
VCE = 1 V, IC = 3 mA, f = 2 GHz
VCE = 3 V, IC = 5 mA, f = 2 GHz
NF
VCE = 1 V, IC = 3 mA, f = 2 GHz
NF
VCE = 3 V, IC = 5 mA, f = 2 GHz
MIN.
80
5.5
4.5
5.5
TYP.
80
6.5
7.5
1.9
1.9
MAX.
1.0
1.0
200
0.7
3.2
3.2
UNIT
µA
µA
GHz
pF
dB
dB
dB
dB
Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank
Marking
hFE Value
KB
RL
80 to 200
TYPICAL CHARACTERISTICS (TA = 25 °C)
PT - TA Characteristics
Free Air
200
100
Per
2 Elements
Element
in
Total
0
50
100
150
Ambient Temperature TA (°C)
IC - VCE Characteristics
25
160 µ A
20
140 µ A
15
120 µA
100 µA
80 µ A
10
60 µ A
40 µ A
5
IB = 20 µ A
0
5
1.0
Collector to Emitter Voltage VCE (V)
IC - VBE Characteristics
20
VCE = 3 V
10
hFE - IC Characteristics
200
VCE = 3 V
100
50
0
0.5
1.0
Base to Emitter Voltage VBE (V)
2
20
10
0.5 1
5 10
50
Collector Current IC (mA)
Share Link: 