MJE16002 Ver la hoja de datos (PDF) - ON Semiconductor
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MJE16002 Datasheet PDF : 10 Pages
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MJE16002 MJE16004
TYPICAL STATIC CHARACTERISTICS (continued)
104
10000
103
TJ = 150°C
102
125°C
100°C
101
75°C
100
REVERSE
FORWARD
10–1
– 0.4
25°C
VCE = 250 Vdc
– 0.2
0
+ 0.2
+ 0.4
+ 0.6
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 5. Collector Cutoff Region
1000
100
10
0.1
TJ = 25°C
Cib
Cob
1.0
10
100
850
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
TYPICAL DYNAMIC CHARACTERISTICS
10000
5000
VBE(off) = 0 V
2000
VBE(off) = 2.0 V
1000
500
VBE(off) = 5.0 V
200
100
0.5
βf = 5
TJ = 75°C
VCC = 20 V
0.7
1.0
2.0
3.0
5.0
IC, COLLECTOR CURRENT (AMPS)
Figure 7. Storage Time
10000
5000
2000
1000
500
200
100
0.5
VBE(off) = 0 V
VBE(off) = 2.0 V
βf = 10
TJ = 75°C
VCC = 20 V
VBE(off) = 5.0 V
0.7
1.0
2.0
3.0
5.0
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Storage Time
1000
500
200
100
50
20
10
0.5
– 2.0 V
– 5.0 V
0V
VBE(off) = 0 V
βf = 5
TJ = 75°C
VCC = 20 V
VBE(off) = 2.0 V
VBE(off) = – 5.0 V
0.7
1.0
2.0
3.0
5.0
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Collector Current Fall Time
4
1000
– 2.0 V
500
200 – 5.0 V
0V
100
VBE(off) = 0 V
50
20
10
0.5
βf = 10
TJ = 75°C
VCC = 20 V
VBE(off) = 2.0 V
VBE(off) = 5.0 V
0.7
1.0
2.0
3.0
5.0
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Collector Current Fall Time
Motorola Bipolar Power Transistor Device Data
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