BD3501FVM Ver la hoja de datos (PDF) - ROHM Semiconductor
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BD3501FVM Datasheet PDF : 17 Pages
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BD3504FVM,BD3500FVM,BD3501FVM,BD3502FVM
●Absolute maximum ratings (Ta=25℃)
◎BD3500/01/02FVM
Parameter
Symbol
Input Voltage
VCC
Drain Voltage (VIN)
VIN
Enable Input Voltage
Ven
Power Dissipation
Pd
Operating Temperature Range
Topr
Storage Temperature Range
Tstg
Maximum Junction Temperature
Tjmax
*1 However, not exceeding Pd.
*2 Pd derating at 3.5mW/℃ for temperature above Ta=25℃
◎BD3504FVM
Parameter
Symbol
Supply Voltage
VCC
Drain Voltage
VD
Enable Input Voltage
Ven
Power dissipation
Pd
Operating temperature range
Topr
Storage temperature range
Tstg
Maximum Junction Temperature
Tjmax
*3 However, not exceeding Pd.
*4 Pd derating at 3.5mW/℃ for temperature above Ta=25℃
Ratings
7 *1
7
7
437.5 *2
-10～+100
-55～+150
+150
Ratings
7 *3
7
7
437.5 *4
-10～+100
-55～+150
+150
●Recommended operating conditions
◎BD3500/01/02FVM
Parameter
Symbol
Supply Voltage
VCC
Drain Voltage(VIN)
VIN
Enable Input Voltage
Ven
Capacitor on NRCS Terminal
CNRCS
Capacitor on SCP Terminal
CSCP
★ No radiation-resistant design is adopted for the present product.
Ratings
MIN
4.5
Vo×1.15
-0.3
0.001
0.001
MAX
5.5
5.5
5.5
1
1
◎BD3504FVM
Parameter
Symbol
Supply Voltage
VCC
Drain Voltage
VD
Enable Input Voltage
Ven
Capacitor in NRCS pin
CNRCS
Output Voltage
VOUT
★ No radiation-resistant design is adopted for the present product.
MIN
4.5
0.65
-0.3
0.001
0.65
Ratings
MAX
5.5
5.5
5.5
1
2.5
Technical Note
Unit
V
V
V
mW
℃
℃
℃
Unit
V
V
V
mW
℃
℃
℃
Unit
V
V
V
µF
µF
Unit
V
V
V
µF
V
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2/16
2010.05 - Rev.A
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