2N6796LCC4 Ver la hoja de datos (PDF) - Semelab - > TT Electronics plc
Número de pieza
componentes Descripción
Fabricante
2N6796LCC4 Datasheet PDF : 2 Pages
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2N6796LCC4
Parameter
Test Conditions
OFF CHARACTERISTICS
V(BR)DSS Drain–Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
ON CHARACTERISTICS
VGS = 0
VDS = Rated VDS
VDS = 80V
VDS = 0
VDS = 0
ID = 0.25mA
VGS = 0
VGS = 0A
TJ = 125°C
VGS = 20V
VGS = -20V
VGS(th)
RDS(on)
Gate Threshold Voltage
VDS = VGS
Static Drain–Source On–Resistance VGS = 10V
VDS(on)
gfs
Drain–Source On–Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
VGS = 15V
VGS = 15V
ID = 0.5mA
ID = 4.7A
TA = 125°C
ID = 7.4A
ID = 4.7A
Ciss
Coss
Crss
Input Capacitance
Output capacitance
Reverse Transfer Capacitance
VDS = 25V
VGS = 0
f = 1.0MHz
Min.
100
2
3
350
150
50
Typ. Max. Unit
V
250
1000 µA
100
nA
-100
4
V
0.18
Ω
0.35
1.56 V
9 mhos
900
500 pF
150
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