TIP35A Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

TIP35A

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

TIP35

V(SUS)CEO

Collector-emitter

sustaining voltage

TIP35A

TIP35B

IC=30mA ;IB=0

TIP35C

VCEsat-1 Collector-emitter saturation voltage IC=15A ;IB=1.5A

VCEsat-2 Collector-emitter saturation voltage IC=25A; IB=5A

VBE-1

Base-emitter on voltage

IC=15A ; VCE=4V

VBE-2

Base-emitter on voltage

IC=25A ; VCE=4V

ICEO

Collector

cut-off current

ICES

Collector

cut-off current

TIP35/35A VCE=30V; IB=0

TIP35B/35C VCE=60V; IB=0

TIP35

VCE=40V;VEB=0

TIP35A

VCE=60V;VEB=0

TIP35B

VCE=80V;VEB=0

TIP35C

VCE=100V;VEB=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

hFE-2

fT

DC current gain

DC current gain

Transition frequency

IC=1.5A ; VCE=4V

IC=15A ; VCE=4V

IC=1A ; VCE=10V

Product Specification

TIP35/35A/35B/35C

MIN TYP. MAX UNIT

40

60

V

80

100

1.8

V

4.0

V

2.0

V

4.0

V

1.0

mA

0.7

mA

1.0

mA

25

15

75

3

MHz

2

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