TIP105(2008) Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza

componentes Descripción

Fabricante

TIP105
(Rev.:2008)

PNP Epitaxial Silicon Darlington Transistor

Fairchild Semiconductor 

Electrical Characteristics* Ta=25°C unless otherwise noted

Symbol

Parameter

Test Condition

VCEO(sus)

Collector-Emitter Sustaining Voltage

: TIP105

: TIP106

: TIP107

IC = -30mA, IB = 0

ICEO

ICBO

IEBO

hFE

Collector Cut-off Current

: TIP105

: TIP106

: TIP107

Collector Cut-off Current

: TIP105

: TIP106

: TIP107

Emitter Cut-off Current

DC Current Gain

VCE(sat)

Collector-Emitter Saturation Voltage

VBE(on)

Cob

Base-Emitter On Voltage

Output Capacitance

* Pulse Test: Pulse Width£300ms, Duty Cycle£2%

VCE = -30V, IB = 0

VCE = -40V, IB = 0

VCE = -50V, IB = 0

VCB = -60V, IE = 0

VCB = -80V, IE = 0

VCB = -100V, IE = 0

VBE= -5V, IC = 0

VCE = -4V, IC = -3A

VCE = -4V, IC = -8A

IC = -3A, IB = -6mA

IC = -8A, IB = -80mA

VCE = -4V, IC = -8A

VCB = -10V, IE = 0, f =

0.1MHz

Min. Typ. Max. Units

-60

V

-80

V

-100

V

-50

mA

-50

mA

-50

mA

1000

200

-50

mA

-50

mA

-50

mA

-2

mA

20000

-2

V

-2.5

V

-2.8

V

300

pF

© 2007 Fairchild Semiconductor Corporation

TIP105/TIP106/TIP107 Rev. 1.0.0

2

www.fairchildsemi.com

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