FDMS4435BZ Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDMS4435BZ Datasheet PDF : 7 Pages
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Typical Characteristics TJ = 25 °C unless otherwise noted
50
VGS = -10 V
40
VGS = -6 V
VGS = -4.5 V
30
VGS = -4 V
20
10
0
0
VGS = -3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1
2
3
4
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
1.6
ID = - 9 A
VGS = -10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
4.0
VGS = -3.5 V
3.5
VGS = -4 V
3.0 PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
2.5
VGS = -4.5 V
2.0
1.5
VGS = -6 V
1.0
0.5
0
10
20
30
-ID, DRAIN CURRENT (A)
VGS = -10 V
40
50
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
80
ID = -9 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
60
40
TJ = 125 oC
20
TJ = 25 oC
0
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
50
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
40
VDS = -5 V
30
TJ = 125 oC
20
TJ = 25 oC
10
TJ = -55 oC
0
1
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
50
VGS = 0 V
10
1
TJ = 125 oC
0.1
0.01
TJ = 25 oC
TJ = -55 oC
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
3
FDMS4435BZ Rev.C3
www.fairchildsemi.com
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