FDMS4435BZ Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDMS4435BZ Datasheet PDF : 7 Pages
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Typical Characteristics TJ = 25 °C unless otherwise noted
10
ID = -9 A
8
VDD = -10 V
6
VDD = -15 V
4
VDD = -20 V
2
0
0
8
16
24
32
40
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
5000
Ciss
1000
Coss
Crss
f = 1 MHz
VGS = 0 V
100
0.1
1
10
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
20
10
TJ = 25 oC
TJ = 125 oC
TJ = 100 oC
1
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
40
32
VGS = -10 V
24
16
Package Limited
VGS = -4.5 V
8
RθJC = 3.2 oC/W
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs Cate Temperature
10-1
10-2 VGS = 0 V
10-3
10-4
10-5
TJ = 125 oC
10-6
10-7
TJ = 25 oC
10-8
10-9
10-10
0 3 6 9 12 15 18 21 24 27 30 33
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. Gate Leakage Current vs Gate to
Source Voltage
100
100 μs
10
1 ms
1 THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
0.1 TJ = MAX RATED
RθJA = 125 oC/W
TA = 25 oC
0.01
0.05 0.1
1
10 ms
100 ms
1s
10 s
DC
10
100
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 12. Forward Bias Safe
Operating Area
©2011 Fairchild Semiconductor Corporation
4
FDMS4435BZ Rev.C3
www.fairchildsemi.com
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