PDTB113ZU Ver la hoja de datos (PDF) - NXP Semiconductors.
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PDTB113ZU Datasheet PDF : 27 Pages
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Nexperia
PDTB1xxxU series
500 mA, 50 V PNP resistor-equipped transistors
103
hFE
102
10
006aaa345
(1)
(2)
(3)
−10−1
VCEsat
(V)
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(1)
(2)
(3)
1
10−1
−10−1
−1
−10
−102
−103
IC (mA)
VCE = 5 V
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 40 C
Fig 4. PDTB113EU: DC current gain as a function of
collector current; typical values
−10−2
−10
−102
IC (mA)
−103
IC/IB = 20
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 40 C
Fig 5.
PDTB113EU: Collector-emitter saturation
voltage as a function of collector current;
typical values
−10
006aaa347
−10
006aaa348
VI(on)
(1)
(V)
(2)
(3)
−1
VI(off)
(V)
(1)
(2)
(3)
−1
−10−1
−10−1
−1
−10
−102
−103
IC (mA)
VCE = 0.3 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(3) Tamb = 100 C
Fig 6. PDTB113EU: On-state input voltage as a
function of collector current; typical values
−10−1
−10−1
−1
−10
IC (mA)
VCE = 5 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(3) Tamb = 100 C
Fig 7. PDTB113EU: Off-state input voltage as a
function of collector current; typical values
PDTB1XXXU_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
© Nexperia B.V. 2017. All rights reserved
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