2N4338-E3 Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
2N4338-E3 Datasheet PDF : 7 Pages
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2N4338/4339/4340/4341
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
500
VGS(off) = −0.7 V
VDS = 10 V
Transfer Characteristics
2
VGS(off) = −1.5 V
VDS = 10 V
400
300
TA = −55_C
25_C
200
1.6
TA = −55_C
1.2
25_C
0.8
125_C
100
0.4
125_C
0
0
−0.1
−0.2
−0.3
−0.4
VGS − Gate-Source Voltage (V)
−0.5
Transconductance vs. Gate-Source Voltage
1.5
VGS(off) = −0.7 V
VDS = 10 V
f = 1 kHz
1.2
TA = −55_C
25_C
0.9
0.6
125_C
0.3
0
0
−0.1
−0.2
−0.3
−0.4
VGS − Gate-Source Voltage (V)
−0.5
Circuit Voltage Gain vs. Drain Current
200
AV + 1
gfs RL
) RLgos
160
Assume VDD = 15 V, VDS = 5 V
120
RL
+
10 V
ID
0
0
−0.4
−0.8
−1.2
−1.6
−2
VGS − Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
4
VGS(off) = −1.5 V
VDS = 10 V
f = 1 kHz
3.2
2.4
TA = −55_C
25_C
1.6
0.8
125_C
0
0
−0.4
−0.8
−1.2
−1.6
−2
VGS − Gate-Source Voltage (V)
2000
1600
1200
On-Resistance vs. Drain Current
TA = 25_C
VGS(off) = −0.7 V
80
VGS(off) = −0.7 V
−1.5 V
40
0
0.01
0.1
1
ID − Drain Current (mA)
Document Number: 70240
S-40990—Rev. F, 24-May-04
800
400
0
0.01
−1.5 V
0.1
ID − Drain Current (mA)
1
www.vishay.com
5
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