2SA1035 Ver la hoja de datos (PDF) - Panasonic Corporation
Número de pieza
componentes Descripción
Fabricante
2SA1035 Datasheet PDF : 4 Pages
| |||
Transistors
2SA1034, 2SA1035
Silicon PNP epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SC2405, 2SC2406
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
■ Features
• Low noise voltage NV
• High forward current transfer ratio hFE
• Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing
■ Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
1
2
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
e Collector-base voltage 2SA1034 VCBO
−35
V
pe) (Emitter open)
2SA1035
−55
nc d ge. ed ty Collector-emitter voltage 2SA1034 VCEO
−35
V
sta tinu (Base open)
2SA1035
−55
a e cycle iscon Emitter-base voltage (Collector open) VEBO
−5
V
life d, d Collector current
IC
−50
mA
n u duct type Peak collector current
ICP
−100
mA
te tin Pro ed Collector power dissipation
four ntinu Junction temperature
ing isco Storage temperature
PC
200
mW
Tj
150
°C
Tstg −55 to +150 °C
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol:
• 2SA1034: F
• 2SA1035: H
in n s followlaned d ■ Electrical Characteristics Ta = 25°C ± 3°C
a o clude pe, p Parameter
Symbol
Conditions
c ed in ce ty Collector-base voltage
tinu nan (Emitter open)
2SA1034
2SA1035
VCBO
IC = −10 µA, IE = 0
M is iscon ainte Collector-emitter voltage
/D , m (Base open)
2SA1034
2SA1035
VCEO
IC = −2 mA, IB = 0
D ance type Emitter-base voltage (Collector open)
inten nce Base-emitter voltage *1
Ma tena Collector-base cutoff current (Emitter open)
main Collector-emitter cutoff current (Base open)
ed Forward current transfer ratio *2
(plan Collector-emitter saturation voltage *1
VEBO
VBE
ICBO
ICEO
hFE
VCE(sat)
IE = −10 µA, IC = 0
VCE = −1 V, IC = −100 mA
VCB = −10 V, IE = 0
VCE = −10 V, IB = 0
VCE = −5 V, IC = −2 mA
IC = −100 mA, IB = −10 mA
Min Typ Max Unit
−35
V
−55
−35
V
−55
−5
V
− 0.7 −1.0
V
− 0.1 µA
−1
µA
180
700
− 0.6 V
Transition frequency
fT
VCB = −5 V, IE = 2 mA, f = 200 MHz
200
MHz
Noise voltage
NV VCE = −10 V, IC = −1 mA, GV = 80 dB
Rg = 100 kΩ, Function = FLAT
150 mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
R
S
T
hFE
180 to 360 260 to 520 360 to 700
Publication date: January 2003
SJC00010BED
1
Share Link: 