2SA1034, 2SA1035
NV VCE
160
IC = −1 mA
140
GV = 80 dB
Function = FLAT
120
Rg = 100 kΩ
100
80
NV VCE
NV IC
300
160
240
IC = −1 mA
GV = 80 dB
Function = RIAA
140
VCE = −10 V
GV = 80 dB
Function = FLAT
Rg = 100 kΩ
120
180
100
Rg = 100 kΩ
80
60
22 kΩ
120
60
22 kΩ
40
22 kΩ
40
4.7 kΩ
20
0
−1
−10
−100
Collector-emitter voltage VCE (V)
60
4.7 kΩ
0
−1
−10
−100
Collector-emitter voltage VCE (V)
4.7 kΩ
20
0
− 0.01
− 0.1
−1
Collector current IC (mA)
e/ pe) NV IC
c ty 300
n d ge. ed VCE=−10V
sta tinu GV = 80 dB
Function = RIAA
le on 240
na uectlifecyced,disc 180
te tin Produuedtyp Rg=100kΩ
ur tin 120
wing fodiscon 22 kΩ
60
in n follo ned 4.7kΩ
a o ludes e,pla 0
c p − 0.01
− 0.1
−1
M Disc (planeMdaminatiennteannacnec/Deitsycpoen,timnuaeindteinnance ty Collector current IC (mA)
NV Rg
160
VCE = −10 V
140
GV = 80 dB
Function = FLAT
120
100
80
60
IC = −1 mA
40
− 0.5 mA
20
− 0.1 mA
0
1
10
100
Signal source resistance Rg (kΩ)
NV Rg
300
VCE = −10 V
GV = 80 dB
Function = RIAA
240
180
120
60
IC = −1 mA
− 0.5 mA
− 0.1 mA
0
1
10
100
Signal source resistance Rg (kΩ)
SJC00010BED
3