AT45DB041B-TI Ver la hoja de datos (PDF) - Atmel Corporation

Número de pieza

componentes Descripción

Fabricante

AT45DB041B-TI

4-megabit 2.5-volt or 2.7-volt DataFlash®

Atmel Corporation 

AT45DB041B

take place in a maximum time of tEP. During this time, the status register will indicate that the

part is busy.

If a sector is programmed or reprogrammed sequentially page-by-page, then the programming

algorithm shown in Figure 17-1 on page 27 is recommended. Otherwise, if multiple bytes in a

page or several pages are programmed randomly in a sector, then the programming algorithm

shown in Figure 17-2 on page 28 is recommended. Each page within a sector must be

updated/rewritten at least once within every 10,000 cumulative page erase/program operations

in that sector.

5.4 Operation Mode Summary

The modes described can be separated into two groups – modes which make use of the Flash

memory array (Group A) and modes which do not make use of the Flash memory array (Group

B).

Group A modes consist of:

1. Main Memory Page Read

2. Main Memory Page to Buffer 1 (or 2) Transfer

3. Main Memory Page to Buffer 1 (or 2) Compare

4. Buffer 1 (or 2) to Main Memory Page Program with Built-in Erase

5. Buffer 1 (or 2) to Main Memory Page Program without Built-in Erase

6. Page Erase

7. Block Erase

8. Main Memory Page Program through Buffer

9. Auto Page Rewrite

Group B modes consist of:

1. Buffer 1 (or 2) Read

2. Buffer 1 (or 2) Write

3. Status Register Read

If a Group A mode is in progress (not fully completed) then another mode in Group A should not

be started. However, during this time in which a Group A mode is in progress, modes in Group B

can be started.

This gives the Serial DataFlash the ability to virtually accommodate a continuous data stream.

While data is being programmed into main memory from buffer 1, data can be loaded into buffer

2 (or vice versa). See application note AN-4 (“Using Atmel’s Serial DataFlash”) for more details.

9

3443C–DFLSH–5/05

Share Link: