STD65N55F3 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

STD65N55F3

Automotive-grade N-channel 55 V, 6.5 mΩ typ., 80 A STripFET F3 Power MOSFET in a DPAK package

STMicroelectronics 

STD65N55F3

Electrical characteristics

Table 6. Source-drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

VSD

trr

Qrr

IRRM

Source-drain current

Source-drain current (pulsed)

Forward on voltage

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 65 A, VGS = 0 V

ISD = 65 A, di/dt = 100 A/μs,

VDD = 25 V, Tj = 150 °C

(see Figure 14. Test circuit for inductive load

switching and diode recovery times)

1. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Min. Typ. Max. Unit

80

A

320

A

-

1.5

V

-

47

ns

-

87

nC

-

3.7

A

DS5128 - Rev 5

page 4/17

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