SIA411DJ-T1-E3 Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
SIA411DJ-T1-E3 Datasheet PDF : 7 Pages
| |||
SiA411DJ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.12
ID = 5.9 A
0.09
10
TJ = 150 °C
1
TJ = 25 °C
0.06
125 °C
0.03
25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
0.8
0.00
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
0.7
25
ID = 250 µA
0.6
20
0.5
15
0.4
10
0.3
5
0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100 µs
1 ms
1
10 ms
100 ms
1s
10 s
0.1
dc
TA = 25 °C
Single Pulse
0.01
0.1
1
BVDSS
Limited
10
100
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 74464
S-80435-Rev. C, 03-Mar-08
Share Link: 