GW30NC60WD Ver la hoja de datos (PDF) - STMicroelectronics

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Fabricante

GW30NC60WD

30 A, 600 V ultra fast IGBT

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STGW30NC60WD

(TCASE = 25 °C unless otherwise specified)

Table 4. Static electrical characteristics

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Collector-emitter

V(BR)CES breakdown voltage

(VGE = 0)

IC = 1 mA

600

V

VCE(sat)

Collector-emitter saturation VGE = 15 V, IC= 20 A

voltage

VGE = 15V, IC = 20 A,TC= 125 °C

2.1 2.5 V

1.8

V

VGE(th) Gate threshold voltage

VCE = VGE, IC = 250µA

3.75

5.75 V

ICES

Collector cut-off current

(VGE = 0)

VCE = 600 V

VCE = 600 V, TC = 125 °C

250 µA

1 mA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ±20 V

± 100 nA

gfs Forward transconductance VCE = 15 V, IC = 20 A

15

S

Table 5. Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Cies

Coes

Cres

Qg

Qge

Qgc

Input capacitance

Output capacitance

Reverse transfer

capacitance

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 25 V, f = 1 MHz,

VGE = 0

VCE = 390 V, IC = 20 A,

VGE = 15 V,

(see Figure 18)

Min. Typ. Max. Unit

2080

pF

175

pF

52

pF

102 140 nC

17.5

nC

47

nC

4/14

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