Q67040-S4242 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

Q67040-S4242

Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKW20N60

25V

20V

Ciss

1nF

15V

120V

480V

Coss

10V

100pF

Crss

5V

0V

0nC 25nC 50nC 75nC 100nC 125nC

QGE, GATE CHARGE

Figure 17. Typical gate charge

(IC = 20A)

10pF

0V

10V

20V

30V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a

function of collector-emitter voltage

(VGE = 0V, f = 1MHz)

25µs

20µs

15µs

10µs

5µs

0µs

10V 11V 12V 13V 14V 15V

VGE, GATE-EMITTER VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(VCE = 600V, start at Tj = 25°C)

350A

300A

250A

200A

150A

100A

50A

0A

10V 12V 14V 16V 18V 20V

VGE, GATE-EMITTER VOLTAGE

Figure 20. Typical short circuit collector

current as a function of gate-emitter voltage

(VCE ≤ 600V, Tj = 150°C)

8

Mar-00

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