SIZ900DT-T1-GE3 Ver la hoja de datos (PDF) - Vishay Semiconductors
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SIZ900DT-T1-GE3 Datasheet PDF : 14 Pages
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New Product
SiZ900DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
140
120
100
80
60
40
20
0
0
Package Limited
25
50
75
100 125 150
TC - Case Temperature (°C)
Current Derating*
100
80
60
40
20
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
Document Number: 67344
10
S11-2380-Rev. C, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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