HY1906P Ver la hoja de datos (PDF) - Unspecified
Número de pieza
componentes Descripción
Fabricante
HY1906P Datasheet PDF : 10 Pages
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HY1906P
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
TC=25°C
60
±25
175
-55 to 175
120
IDM Pulsed Drain Current *
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Avalanche Ratings
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
380**
120
80
188
94
0.8
62.5
EAS Avalanche Energy, Single Pulsed
L=0.3mH
600***
Note：* Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=48V
Electrical Characteristics
(T
A
=
25°C
Unless
Otherwise
Noted)
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON)* Drain-Source On-state Resistance
Diode Characteristics
VGS=0V, IDS=250µA
VDS=60V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±25V, VDS=0V
VGS=10V, IDS=60A
VSD* Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ISD=60A, VGS=0V
ISD=60A, dlSD/dt=100A/µs
HY1906P
Min. Typ. Max.
60
-
-
-
-
1
-
-
10
2
3
4
-
- ±100
- 6.0 7.5
- 0.8 1.2
-
50
-
-
95
-
Unit
V
µA
V
nA
mΩ
V
ns
nC
2
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