HY1906P/B Ver la hoja de datos (PDF) - Unspecified

Número de pieza

componentes Descripción

Fabricante

HY1906P/B

N-Channel Enhancement Mode MOSFET / TO-220 Package

Unspecified 

HY1906P

Electrical Characteristics (Cont.)

(T

A

=

25°C

Unless

Otherwise

Noted)

Symbol

Parameter

Test Conditions

Dynamic Characteristics b

RG Gate Resistance

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

td(ON) Turn-on Delay Time

Tr Turn-on Rise Time

td(OFF) Turn-off Delay Time

Tf Turn-off Fall Time

Gate Charge Characteristics b

VGS=0V,VDS=0V,F=1MHz

VGS=0V,

VDS=25V,

Frequency=1.0MHz

VDD=30V, R G = 6 Ω,

IDS=60A, VGS=10V,

Qg Total Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

VDS=30V, VGS=10V,

IDS=60A

Note * : Pulse test ; pulse width ≤300µs, duty cycle≤2%.

HY1906P

Min. Typ. Max.

-

1.0

-

- 4577 -

- 876 -

- 276 -

-

13 26

-

11 20

-

40 66

-

60 95

-

96

-

-

21

-

-

23

-

Unit

Ω

pF

ns

nC

3

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