FCA20N60S-F109 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FCA20N60S-F109 Datasheet PDF : 9 Pages
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Package Marking and Ordering Information
Device Marking Device
FCA20N60S
FCA20N60S
FCA20N60S
FCA20N60S_F109
Package
TO-3P
TO-3PN
Reel Size
-
-
Tape Width
-
-
Quantity
30
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA, TJ = 25°C
600
VGS = 0V, ID = 250μA, TJ = 150°C
--
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25°C
--
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 20A
--
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
Dynamic Characteristics
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 10A
VDS = 40V, ID = 10A
--
--
--
--
3.0
--
(Note 4) --
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
--
f = 1.0MHz
--
--
VDS = 480V, VGS = 0V, f = 1.0MHz
--
VDS = 0V to 400V, VGS = 0V
--
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 300V, ID = 20A
RG = 25Ω
VDS = 480V, ID = 20A
VGS = 10V
Drain-Source Diode Characteristics and Maximum Ratings
--
--
--
(Note 4, 5)
--
--
--
(Note 4, 5)
--
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 20A
dIF/dt =100A/μs
--
--
--
--
(Note 4)
--
Typ
--
650
0.6
700
--
--
--
--
--
0.22
11.5
1730
960
85
45
110
46
140
175
100
57
11.5
28
--
--
--
450
8.2
Max Units
--
V
--
V
-- V/°C
--
V
1
μA
10
μA
100 nA
-100 nA
5.0
V
0.26 Ω
--
S
2250 pF
1150 pF
--
pF
60
pF
--
pF
90
ns
280 ns
350 ns
200 ns
72
nC
14
nC
--
nC
20
A
60
A
1.4
V
--
ns
--
μC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 20A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
FCA20N60S REV. A1
www.fairchildsemi.com
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