NGB8206ANT4G Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
NGB8206ANT4G Datasheet PDF : 9 Pages
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NGB8206N, NGB8206AN
ELECTRICAL CHARACTERISTICS
Characteristic
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Resistive)
Fall Time (Resistive)
Turn−Off Delay Time (Inductive)
Fall Time (Inductive)
Turn−On Delay Time
Rise Time
Symbol
Test Conditions
td(off)
tf
td(off)
tf
td(on)
tr
VCC = 300 V, IC = 9.0
A
RG = 1.0 kW, RL = 33
W
VGE = 5 V
VCC = 300 V, IC = 9.0
A
RG = 1.0 kW, L = 300
mH
VGE = 5 V
VCC = 14 V, IC = 9.0 A
RG = 1.0 kW, RL = 1.5
W
VGE = 5 V
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
Temperature
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
Min Typ Max Unit
6.0 8.0 10 mSec
6.0 8.0 10
4.0 6.0 8.0
8.0 10.5 14
3.0 5.0 7.0
5.0 7.0 9.0
1.5 3.0 4.5
5.0 7.0 10
1.0 1.5 2.0
1.0 1.5 2.0
4.0 6.0 8.0
3.0 5.0 7.0
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