SUD19N20-90(2001) Ver la hoja de datos (PDF) - Vishay Semiconductors
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SUD19N20-90 Datasheet PDF : 4 Pages
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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
40
6V
VGS = 10 thru 7 V
30
30
SUD19N20-90
Vishay Siliconix
Transfer Characteristics
20
10
0
0
70
60
50
40
30
20
10
0
0
2500
5V
4V
2
4
6
8
10
VDS – Drain-to-Source Voltage (V)
Transconductance
TC = –55_C
25_C
125_C
10
20
30
40
ID – Drain Current (A)
Capacitance
2000
Ciss
1500
1000
500
Crss
Coss
0
0
40
80
120
160
200
VDS – Drain-to-Source Voltage (V)
Document Number: 71767
S-05233—Rev. A, 17-Dec-01
20
10
0
0
0.20
TC = 125_C
25_C
–55_C
1
2
3
4
5
6
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.15
0.10
VGS = 6 V
0.05
VGS = 10 V
0.00
0
20
10
20
30
40
ID – Drain Current (A)
Gate Charge
16
VDS = 100 V
ID = 19 A
12
8
4
0
0
10
20
30
40
50
60
Qg – Total Gate Charge (nC)
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