SUD19N20-90 Ver la hoja de datos (PDF) - Vishay Semiconductors
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SUD19N20-90 Datasheet PDF : 8 Pages
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SUD19N20-90
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.0
100
VGS = 10 V
2.5
ID = 5 A
2.0
TJ = 150 °C
1.5
10
1.0
TJ = 25 °C
0.5
0.0
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
THERMAL RATINGS
25
1
0
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
100
20
Limited by RDS(on)*
10 µs
100 µs
10
15
1 ms
10
1
10 ms
5
TC = 25 °C
Single Pulse
100 ms
1 s, DC
0
0
25 50 75 100 125 150 175
TC - Case Temperature (°C)
Maximum Avalanche Drain Current
vs. Case Temperature
2
1
Duty Cycle = 0.5
0.1
0.1
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
30
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71767.
www.vishay.com
4
Document Number: 71767
S10-2245-Rev. E, 04-Oct-10
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