2SA1745 Ver la hoja de datos (PDF) - SANYO -> Panasonic

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componentes Descripción

Fabricante

2SA1745

PNP/NPN Epitaxial Planar Silicon Transistor

SANYO -> Panasonic 

2SA1745/2SC4555

Parameter

Collector-to-Emitter Saturation Voltage

Symbol

Conditions

VCE(sat)1 IC=(–)5mA, IB=(–)0.5mA

VCE(sat)2 IC=(–)200mA, IB=(–)10mA

Base-to-Emitter Saturation Voltage

VBE(sat) IC=(–)200mA, IB=(–)10mA

Collector-to-Base Breakdown Voltage

V(BR)CBO IC=(–)10µA, IE=0

Collector-to-Emitter Breakdown Voltage

V(BR)CEO IC=(–)1mA, RBE=∞

Emiiter-to-Base Breakdown Voltage

V(BR)EBO IE=(–)10µA, IC=0

* : The 2SA1745/2SC4555 are classified by 10mA hFE as follows :

130 5 270 200 6 400 300 7 600

Marking 2SA1745 : ES

2SC4555 : UT

hFE rank : 5, 6, 7

Ratings

Unit

min typ max

(–)15 (–35) mV

30

160 300 mV

(–200) (–360)

(–)0.95 (–)1.2 V

(–)20

V

(–)15

V

(–)5

V

No.3187-2/4

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